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Simultaneous ultra-long data retention and low power based on Ge10Sb90/SiO2 multilayer thin films
栏目:用户论文 发布时间:2020-04-16
Simultaneous ultra-long data retention and low power based  on Ge10Sb90/SiO2 multilayer thin films


摘要:

The resistance as a function of temperature (R–T) was measured using the in situ measurement with a heating rate of 30 °C/min. The sample temperature was measured by a Pt-100 thermocouple located at a heating stage controlled by a TP 94 temperature controller (Linkam Scientific Instruments Ltd, Surrey, UK). The optical band gap was measured by NIR spectrophotometer. The phase structures of the films annealed at various temperatures were investigated by XRD analysis using Cu Ka radiation in the 2θ range from 20° to 60°, with a scanning step of 0.01°. Roughness on the surface of the films was examined by atomic force microscopy (AFM, FM-Nanoview 1000). A picosecond laser pump–probe system was used for real-time reflectivity measurement. The light source used for irradiating the samples was a frequency-doubled model-locked neodymium yttrium aluminum garnet laser operating at 532 nm wave-length with a pulse duration of 30 ps. Samples with a thickness of 50 nm were prepared for X-ray reflectometry (XRR) measurement to estimate the film density change during crystallization. The device properties of PCM cell were measured using a Tektronix AWG5012B arbitrary waveform generator and a Keithley 2602 A parameter analyzer.


编辑:

Haipeng You  · Yifeng Hu · Xiaoqin Zhu · Hua Zou · Sannian Song · Zhitang Song


期刊:

Springer-Verlag GmbH Germany, part of Springer Nature 2018

 

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