Crystallization Properties of Mg35Sb65/Sb Nanocomposite Multilayer Films for Phase Change Memory Application
All films in this paper were prepared by magnetron sputtering.The cylindrical Mg35Sb65 target was placed in the A position whileSb target was placed in B target in vacuum chamber. The sputtering power of A, B target was fixed at 30W. The uniform film wasformed by sputtering deposition on the surface of SiO2 substrates inargon atmosphere of 0.4 Pa. The thickness of films was controlled bychanging the sputtering time.13,14 The composite films of MgSb/Sbwere prepared by alternate sputtering Mg35Sb65 and Sb targets atroom temperature. The total thickness of composite films was fixedzE-mail: email@example.com; firstname.lastname@example.org 50 nm. The sample plate was kept rotating of 20 r/m to guarantee the uniformity of the film during depositing. The electrical conductivity measurement system was built by cold/hot table (LinkamHFS600E-PB2) and tramegger (Keithley 6517B). The heating rate was20°C/min. Atomic force microscopy (FM-nanoview1000 AFM) wasapplied to detect the surface roughness of the film during the phasetransformation in a Semi-contact mode. The structure of thin filmsat different annealing temperatures was studied by Raman spectrumwith the wavelength 514.5 nm. The scratch test was used to show thecomparison of the adhesion strength between the film and the substrate.