Effects of SiO2 interlayers on the phase change behavior in the multilayer Zn15Sb85/SiO2 materials
The dependence of the resistance on the temperature (ReT) of the multilayer ZS/SO and monolayer ZnSb materials were measuredin situ in a homemade vacuum chamber with a TP 94 temperaturecontroller (Linkam Scientific Instruments Ltd, Surrey, UK). The dataretention ability of the amorphous state was estimated. Diffusereflectance spectra were recorded by a near infrared spectroscopy(NIR, 7100CRT, XINMAO, China) spectrophotometer in the wavelength range of 400e2500 nm. The crystalline phase structure wasanalyzed by X-ray diffraction (XRD, PANalytical, X'PERT Powder)with Cu Ka radiation in the 2q range from 20 to 60 performed at40 kV and 50 mA. The surface morphology of the PCM cells wasobserved by atomic force microscopy (AFM, FM-Nanoview 1000).The real-time reflectivity measurement was tested by a picosecondlaser pump-probe system. The light source used for irradiating thesamples was a frequency-doubled model-locked neodymiumyttrium aluminum garnet laser with the operating wave-length532 nm and pulse duration 30 ps The volume change during thecrystallization process was determined by x-ray reflectivity (XRR).T-shaped PCM devices were manufactured to confirm the electricalswitching characteristics. The current-voltage (I-V) and resistancevoltage (R-V) properties were recorded using an arbitrary waveform generator (Tektronix AWG5012B) and a digital semiconductorparameter analyzer (Keithley 2602A).
Rui Zhang ,Yifeng Hu ,Qingqian Chou ,Tianshu Lai , Xiaoqin Zhu